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Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations
β-Ga 2 O 3 is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga 2 O 3 thin films could only be realized on six-fold symmetric single crystal substrates including sapphire (0001), 3C-Si...
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| Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-11, Vol.9 (44), p.15868-15876 |
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| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c76A-56d7e39a4fddb0cd921fedf9878473b6d0ce86a12759619dd330b30e4ad42f763 |
| container_end_page | 15876 |
| container_issue | 44 |
| container_start_page | 15868 |
| container_title | Journal of materials chemistry. C, Materials for optical and electronic devices |
| container_volume | 9 |
| creator | Tang, Xiao Li, Kuang-Hui Liao, Che-Hao Zheng, Dongxing Liu, Chen Lin, Rongyu Xiao, Na Krishna, Shibin Tauboada, Jose Li, Xiaohang |
| description | β-Ga
2
O
3
is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga
2
O
3
thin films could only be realized on six-fold symmetric single crystal substrates including sapphire (0001), 3C-SiC (001), and native β-Ga
2
O
3
. In this report, we demonstrate the epitaxial growth of β-Ga
2
O
3
(−201) thin films on non-six-fold symmetric substrates,
i.e.
, the CeO
2
(001) substrate. Different from the conventional six-fold symmetric sapphire substrates, the four-fold symmetric cubic phase CeO
2
(001) induces the formation of two sets of hexagonal-like atom frameworks with a mutual rotation angle of 90° in the β-Ga
2
O
3
(−201) plane. This is due to the small lattice mismatch between the β-Ga
2
O
3
(−201) plane and the CeO
2
(001) plane in two directions: CeO
2
[100]//β-Ga
2
O
3
[010] and CeO
2
[010]//β-Ga
2
O
3
[010]. Besides, the valence band offset (VBO) and the conduction band offset (CBO) at the β-Ga
2
O
3
/CeO
2
heterojunction are examined using high-resolution X-ray photoelectron spectroscopy (HR-XPS) and are estimated to be 1.63 eV and 0.18 eV, respectively, suggesting a type-II heterostructure. The obtained epitaxial β-Ga
2
O
3
thin films are fabricated into photodetectors (PDs), which show key photoelectrical characteristics that are similar to those of PDs using the conventional sapphire substrate. The results indicate the epitaxial β-Ga
2
O
3
thin films on CeO
2
have a high crystallization quality, and thus are capable of producing various essential devices. Moreover, the epitaxy between β-Ga
2
O
3
(−201) and CeO
2
(001) demonstrated in this work can pave the way for constructing heterostructures between β-Ga
2
O
3
and other cubic-phase functional materials, such as p-type semiconductors, piezoelectric semiconductors, and superconductors. |
| doi_str_mv | 10.1039/D1TC02852A |
| format | article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1039_D1TC02852A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1039_D1TC02852A</sourcerecordid><originalsourceid>FETCH-LOGICAL-c76A-56d7e39a4fddb0cd921fedf9878473b6d0ce86a12759619dd330b30e4ad42f763</originalsourceid><addsrcrecordid>eNpFUL1OwzAYtBBIVKULT-CxIAX8k9jxWIVSkCp16R458ec2KIkr2xV0YGfmUXgQHoInIRUIbrmT7mc4hC4puaGEq9s7ui4IyzM2O0EjRjKSyIynp3-aiXM0CeGJDMipyIUaodf5ron6pdEt3nj3HLfYWfz5kSw0ZniFOZ5-vb0zQq9w3DY9tk3bYTew2_vEutbgcOg6iP6AC1gNlSk5ZsO-CtHrCEPQ4y1E8G4DPbh9wE0fYTN4jevDBTqzug0w-eUxWt_P18VDslwtHovZMqmlmCWZMBK40qk1piK1UYxaMFblMk8lr4QhNeRCUyYzJagyhnNScQKpNimzUvAxuv6Zrb0LwYMtd77ptD-UlJTH68r_6_g3t5Rg4g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations</title><source>Royal Society of Chemistry</source><creator>Tang, Xiao ; Li, Kuang-Hui ; Liao, Che-Hao ; Zheng, Dongxing ; Liu, Chen ; Lin, Rongyu ; Xiao, Na ; Krishna, Shibin ; Tauboada, Jose ; Li, Xiaohang</creator><creatorcontrib>Tang, Xiao ; Li, Kuang-Hui ; Liao, Che-Hao ; Zheng, Dongxing ; Liu, Chen ; Lin, Rongyu ; Xiao, Na ; Krishna, Shibin ; Tauboada, Jose ; Li, Xiaohang</creatorcontrib><description>β-Ga
2
O
3
is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga
2
O
3
thin films could only be realized on six-fold symmetric single crystal substrates including sapphire (0001), 3C-SiC (001), and native β-Ga
2
O
3
. In this report, we demonstrate the epitaxial growth of β-Ga
2
O
3
(−201) thin films on non-six-fold symmetric substrates,
i.e.
, the CeO
2
(001) substrate. Different from the conventional six-fold symmetric sapphire substrates, the four-fold symmetric cubic phase CeO
2
(001) induces the formation of two sets of hexagonal-like atom frameworks with a mutual rotation angle of 90° in the β-Ga
2
O
3
(−201) plane. This is due to the small lattice mismatch between the β-Ga
2
O
3
(−201) plane and the CeO
2
(001) plane in two directions: CeO
2
[100]//β-Ga
2
O
3
[010] and CeO
2
[010]//β-Ga
2
O
3
[010]. Besides, the valence band offset (VBO) and the conduction band offset (CBO) at the β-Ga
2
O
3
/CeO
2
heterojunction are examined using high-resolution X-ray photoelectron spectroscopy (HR-XPS) and are estimated to be 1.63 eV and 0.18 eV, respectively, suggesting a type-II heterostructure. The obtained epitaxial β-Ga
2
O
3
thin films are fabricated into photodetectors (PDs), which show key photoelectrical characteristics that are similar to those of PDs using the conventional sapphire substrate. The results indicate the epitaxial β-Ga
2
O
3
thin films on CeO
2
have a high crystallization quality, and thus are capable of producing various essential devices. Moreover, the epitaxy between β-Ga
2
O
3
(−201) and CeO
2
(001) demonstrated in this work can pave the way for constructing heterostructures between β-Ga
2
O
3
and other cubic-phase functional materials, such as p-type semiconductors, piezoelectric semiconductors, and superconductors.</description><identifier>ISSN: 2050-7526</identifier><identifier>EISSN: 2050-7534</identifier><identifier>DOI: 10.1039/D1TC02852A</identifier><language>eng</language><ispartof>Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-11, Vol.9 (44), p.15868-15876</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c76A-56d7e39a4fddb0cd921fedf9878473b6d0ce86a12759619dd330b30e4ad42f763</citedby><cites>FETCH-LOGICAL-c76A-56d7e39a4fddb0cd921fedf9878473b6d0ce86a12759619dd330b30e4ad42f763</cites><orcidid>0000-0002-0138-7206</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Tang, Xiao</creatorcontrib><creatorcontrib>Li, Kuang-Hui</creatorcontrib><creatorcontrib>Liao, Che-Hao</creatorcontrib><creatorcontrib>Zheng, Dongxing</creatorcontrib><creatorcontrib>Liu, Chen</creatorcontrib><creatorcontrib>Lin, Rongyu</creatorcontrib><creatorcontrib>Xiao, Na</creatorcontrib><creatorcontrib>Krishna, Shibin</creatorcontrib><creatorcontrib>Tauboada, Jose</creatorcontrib><creatorcontrib>Li, Xiaohang</creatorcontrib><title>Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations</title><title>Journal of materials chemistry. C, Materials for optical and electronic devices</title><description>β-Ga
2
O
3
is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga
2
O
3
thin films could only be realized on six-fold symmetric single crystal substrates including sapphire (0001), 3C-SiC (001), and native β-Ga
2
O
3
. In this report, we demonstrate the epitaxial growth of β-Ga
2
O
3
(−201) thin films on non-six-fold symmetric substrates,
i.e.
, the CeO
2
(001) substrate. Different from the conventional six-fold symmetric sapphire substrates, the four-fold symmetric cubic phase CeO
2
(001) induces the formation of two sets of hexagonal-like atom frameworks with a mutual rotation angle of 90° in the β-Ga
2
O
3
(−201) plane. This is due to the small lattice mismatch between the β-Ga
2
O
3
(−201) plane and the CeO
2
(001) plane in two directions: CeO
2
[100]//β-Ga
2
O
3
[010] and CeO
2
[010]//β-Ga
2
O
3
[010]. Besides, the valence band offset (VBO) and the conduction band offset (CBO) at the β-Ga
2
O
3
/CeO
2
heterojunction are examined using high-resolution X-ray photoelectron spectroscopy (HR-XPS) and are estimated to be 1.63 eV and 0.18 eV, respectively, suggesting a type-II heterostructure. The obtained epitaxial β-Ga
2
O
3
thin films are fabricated into photodetectors (PDs), which show key photoelectrical characteristics that are similar to those of PDs using the conventional sapphire substrate. The results indicate the epitaxial β-Ga
2
O
3
thin films on CeO
2
have a high crystallization quality, and thus are capable of producing various essential devices. Moreover, the epitaxy between β-Ga
2
O
3
(−201) and CeO
2
(001) demonstrated in this work can pave the way for constructing heterostructures between β-Ga
2
O
3
and other cubic-phase functional materials, such as p-type semiconductors, piezoelectric semiconductors, and superconductors.</description><issn>2050-7526</issn><issn>2050-7534</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpFUL1OwzAYtBBIVKULT-CxIAX8k9jxWIVSkCp16R458ec2KIkr2xV0YGfmUXgQHoInIRUIbrmT7mc4hC4puaGEq9s7ui4IyzM2O0EjRjKSyIynp3-aiXM0CeGJDMipyIUaodf5ron6pdEt3nj3HLfYWfz5kSw0ZniFOZ5-vb0zQq9w3DY9tk3bYTew2_vEutbgcOg6iP6AC1gNlSk5ZsO-CtHrCEPQ4y1E8G4DPbh9wE0fYTN4jevDBTqzug0w-eUxWt_P18VDslwtHovZMqmlmCWZMBK40qk1piK1UYxaMFblMk8lr4QhNeRCUyYzJagyhnNScQKpNimzUvAxuv6Zrb0LwYMtd77ptD-UlJTH68r_6_g3t5Rg4g</recordid><startdate>20211118</startdate><enddate>20211118</enddate><creator>Tang, Xiao</creator><creator>Li, Kuang-Hui</creator><creator>Liao, Che-Hao</creator><creator>Zheng, Dongxing</creator><creator>Liu, Chen</creator><creator>Lin, Rongyu</creator><creator>Xiao, Na</creator><creator>Krishna, Shibin</creator><creator>Tauboada, Jose</creator><creator>Li, Xiaohang</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0138-7206</orcidid></search><sort><creationdate>20211118</creationdate><title>Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations</title><author>Tang, Xiao ; Li, Kuang-Hui ; Liao, Che-Hao ; Zheng, Dongxing ; Liu, Chen ; Lin, Rongyu ; Xiao, Na ; Krishna, Shibin ; Tauboada, Jose ; Li, Xiaohang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c76A-56d7e39a4fddb0cd921fedf9878473b6d0ce86a12759619dd330b30e4ad42f763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tang, Xiao</creatorcontrib><creatorcontrib>Li, Kuang-Hui</creatorcontrib><creatorcontrib>Liao, Che-Hao</creatorcontrib><creatorcontrib>Zheng, Dongxing</creatorcontrib><creatorcontrib>Liu, Chen</creatorcontrib><creatorcontrib>Lin, Rongyu</creatorcontrib><creatorcontrib>Xiao, Na</creatorcontrib><creatorcontrib>Krishna, Shibin</creatorcontrib><creatorcontrib>Tauboada, Jose</creatorcontrib><creatorcontrib>Li, Xiaohang</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tang, Xiao</au><au>Li, Kuang-Hui</au><au>Liao, Che-Hao</au><au>Zheng, Dongxing</au><au>Liu, Chen</au><au>Lin, Rongyu</au><au>Xiao, Na</au><au>Krishna, Shibin</au><au>Tauboada, Jose</au><au>Li, Xiaohang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations</atitle><jtitle>Journal of materials chemistry. C, Materials for optical and electronic devices</jtitle><date>2021-11-18</date><risdate>2021</risdate><volume>9</volume><issue>44</issue><spage>15868</spage><epage>15876</epage><pages>15868-15876</pages><issn>2050-7526</issn><eissn>2050-7534</eissn><abstract>β-Ga
2
O
3
is a wide bandgap semiconductor material that is promising for many fields such as gas sensors, UV detectors, and high-power electronics. Until now, most epitaxial β-Ga
2
O
3
thin films could only be realized on six-fold symmetric single crystal substrates including sapphire (0001), 3C-SiC (001), and native β-Ga
2
O
3
. In this report, we demonstrate the epitaxial growth of β-Ga
2
O
3
(−201) thin films on non-six-fold symmetric substrates,
i.e.
, the CeO
2
(001) substrate. Different from the conventional six-fold symmetric sapphire substrates, the four-fold symmetric cubic phase CeO
2
(001) induces the formation of two sets of hexagonal-like atom frameworks with a mutual rotation angle of 90° in the β-Ga
2
O
3
(−201) plane. This is due to the small lattice mismatch between the β-Ga
2
O
3
(−201) plane and the CeO
2
(001) plane in two directions: CeO
2
[100]//β-Ga
2
O
3
[010] and CeO
2
[010]//β-Ga
2
O
3
[010]. Besides, the valence band offset (VBO) and the conduction band offset (CBO) at the β-Ga
2
O
3
/CeO
2
heterojunction are examined using high-resolution X-ray photoelectron spectroscopy (HR-XPS) and are estimated to be 1.63 eV and 0.18 eV, respectively, suggesting a type-II heterostructure. The obtained epitaxial β-Ga
2
O
3
thin films are fabricated into photodetectors (PDs), which show key photoelectrical characteristics that are similar to those of PDs using the conventional sapphire substrate. The results indicate the epitaxial β-Ga
2
O
3
thin films on CeO
2
have a high crystallization quality, and thus are capable of producing various essential devices. Moreover, the epitaxy between β-Ga
2
O
3
(−201) and CeO
2
(001) demonstrated in this work can pave the way for constructing heterostructures between β-Ga
2
O
3
and other cubic-phase functional materials, such as p-type semiconductors, piezoelectric semiconductors, and superconductors.</abstract><doi>10.1039/D1TC02852A</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-0138-7206</orcidid></addata></record> |
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| ispartof | Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-11, Vol.9 (44), p.15868-15876 |
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| language | eng |
| recordid | cdi_crossref_primary_10_1039_D1TC02852A |
| source | Royal Society of Chemistry |
| title | Epitaxial growth of β-Ga 2 O 3 (−201) thin film on four-fold symmetry CeO 2 (001) substrate for heterogeneous integrations |
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