Loading…
Rapid, energy-efficient and pseudomorphic microwave-induced-metal-plasma (MIMP) synthesis of Mg 2 Si and Mg 2 Ge
Polycrystalline magnesium silicide, Mg 2 Si and magnesium germanide, Mg 2 Ge were synthesised from the elemental powders via the microwave-induced-metal-plasma (MIMP) approach at 200 W within 1 min in vacuo for the first time. The formation of reactive Mg plasma facilitated by the high-frequency ele...
Saved in:
Published in: | CrystEngComm 2022-08, Vol.24 (32), p.5801-5809 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Polycrystalline magnesium silicide, Mg
2
Si and magnesium germanide, Mg
2
Ge were synthesised from the elemental powders
via
the microwave-induced-metal-plasma (MIMP) approach at 200 W within 1 min
in vacuo
for the first time. The formation of reactive Mg plasma facilitated by the high-frequency electromagnetic field (2.45 GHz) is at the origin of the ultrafast reaction kinetics in these preparations. Powder X-ray diffraction (PXRD), Scanning Electron Microscopy (SEM) combined with Energy Dispersive X-ray Spectroscopy (EDX) and X-ray Photoelectron Spectroscopy (XPS) attest to the high purity of the products. Both SEM and Transmission Electron Microscopy (with Selected Area Electron Diffraction) (TEM/SAED) demonstrate the pseudomophic nature of the metal plasma reactions such that use of nanoporous Ge starting material leads to the production of nanoporous germanide, Mg
2
Ge. Covalent Mg–Si and Mg–Ge bonds with partial ionic character are suggested by XPS, while the refined crystal structures are consistent with Mg–Mg interactions within the cubane-like clusters in Mg
2
X antifluorite unit cells. The MIMP method unlocks not only the sustainable synthesis of Mg
2
X materials but also the wider production of intermetallics and
Zintl
phases of prescribed morphology. |
---|---|
ISSN: | 1466-8033 1466-8033 |
DOI: | 10.1039/D2CE00721E |