Fabrication of a 100 × 100 mm 2 nanometer-thick graphite pellicle for extreme ultraviolet lithography by a peel-off and camphor-supported transfer approach

An extreme ultraviolet (EUV) lithography pellicle is used to physically protect a mask from contaminants during the EUV exposure process and needs to have a high EUV transmittance. The EUV pellicle should be fabricated using a freestanding thin film with several tens of nanometer thickness in an are...

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Bibliographic Details
Published in:Nanoscale advances 2022-09, Vol.4 (18), p.3824-3831
Main Authors: Nam, Ki-Bong, Hu, Qicheng, Yeo, Jin-Ho, Kim, Mun Ja, Yoo, Ji-Beom
Format: Article
Language:English
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Summary:An extreme ultraviolet (EUV) lithography pellicle is used to physically protect a mask from contaminants during the EUV exposure process and needs to have a high EUV transmittance. The EUV pellicle should be fabricated using a freestanding thin film with several tens of nanometer thickness in an area of 110 × 142 mm 2 , which is a challenging task. Here, we propose a peel-off approach to directly detach the nanometer-thick graphite film (NGF)/Ni film from SiO 2 /Si wafer and significantly shorten the etching time of the Ni film. Combined with the residue-damage-free transfer method that used camphor as a supporting layer, we successfully fabricated a large-area (100 × 100 mm 2 ) NGF pellicle with a thickness of ∼20 nm, and an EUV transmittance of ∼87.2%.
ISSN:2516-0230
2516-0230
DOI:10.1039/D2NA00488G