Growth of high-quality langatate crystals by the Czochralski method with elimination of Ga 2 O 3 volatilization

Langatate (La 3 Ga 5.5 Ta 0.5 O 14 , LGT) crystals have attracted significant attention due to their excellent piezoelectric properties. However, the volatilization of Ga 2 O 3 during the traditional Czochralski (Cz) growth often hinders the preparation of high-quality LGT crystals. This work replac...

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Bibliographic Details
Published in:CrystEngComm 2024-02, Vol.26 (9), p.1312-1318
Main Authors: Wang, Shuai, Wang, Xianyang, Ji, Cheng, Dai, Peng, Shen, Liming, Bao, Ningzhong
Format: Article
Language:English
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Summary:Langatate (La 3 Ga 5.5 Ta 0.5 O 14 , LGT) crystals have attracted significant attention due to their excellent piezoelectric properties. However, the volatilization of Ga 2 O 3 during the traditional Czochralski (Cz) growth often hinders the preparation of high-quality LGT crystals. This work replaced the iridium crucible with a platinum crucible and successfully grew an LGT crystal with a diameter of 60 mm under an air atmosphere by the Cz method, effectively eliminating Ga 2 O 3 volatilization. The full width at half maximum of the rocking curve is 25.2′′, and the transmission is 80%. After annealing in Ar at 1100 °C, the resistivity increases to 1.2 × 10 8 Ω cm at 560 °C. This work has great potential for growing high-quality LGT crystals for use in high-temperature piezoelectric sensors.
ISSN:1466-8033
1466-8033
DOI:10.1039/D3CE01198D