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Improved eco-friendly CsSn 0.5 Ge 0.5 I 3 perovskite photovoltaic efficiency beyond 20% with SMe-TATPyr hole-transporting layer
Perovskites composed of inorganic cesium (Cs) halide provide a route to thermally resistant solar cells. Nevertheless, the use of hole-transporting layers (HTLs) with hydrophobic additives is constrained by moisture-induced phase deterioration. Due to significant electrical loss, dopant-free HTLs ar...
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Published in: | Physical chemistry chemical physics : PCCP 2024-01, Vol.26 (4), p.3229-3239 |
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Main Authors: | , , , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Perovskites composed of inorganic cesium (Cs) halide provide a route to thermally resistant solar cells. Nevertheless, the use of hole-transporting layers (HTLs) with hydrophobic additives is constrained by moisture-induced phase deterioration. Due to significant electrical loss, dopant-free HTLs are unable to produce practical solar cells. In this article, we designed a two-dimensional 1,3,6,8-tetrakis[5-(
,
-di(
-(methylthio)phenyl)amino-
-phenyl)-thiophen-2-yl]pyrene (termed SMe-TATPyr) molecule as a new HTL to regulate electrical loss in lead-free perovskite solar cells (PSCs). We optimized the power conversion efficiency (PCE) of PSCs based on mixed tin (Sn)/germanium (Ge) halide perovskite (CsSn
Ge
I
) by exploring different factors, such as the deep and shallow levels of defects, density of states at the valence band (
), thickness of the perovskite film, p-type doping concentration (
) of HTL, the series and shunt resistances, and so on. We carried out comparative research by employing the 1D-SCAPS (a solar cell capacitance simulator) analysis tool. Through optimization of the PSC, we obtained the highest parameters in the simulated solar cell structure of fluorine tin oxide (FTO)/titanium dioxide (TiO
)/CsSn
Ge
I
/SMe-TATPyr/gold (Au), and the PCE reached up to 20% with a fill factor (FF) of 81.89%. |
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ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/D3CP05445D |