Gamma radiation-induced nanodefects in diffusive memristors and artificial neurons

Gamma photons with an average energy of 1.25 MeV are well-known to generate large amounts of defects in semiconductor electronic devices. Here we investigate the novel effect of gamma radiation on diffusive memristors based on metallic silver nanoparticles dispersed in a dielectric matrix of silica....

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Bibliographic Details
Published in:Nanoscale 2023-10, Vol.15 (38), p.15665-15674
Main Authors: Pattnaik, D. P, Andrews, C, Cropper, M. D, Gabbitas, A, Balanov, A. G, Savel'ev, S, Borisov, P
Format: Article
Language:English
Subjects:
Filaments
Gamma rays
Memristors
Nanoparticles
Neurons
Oxidation
Radiation
Radiation effects
Silicon dioxide
Silver
Switching
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Summary:Gamma photons with an average energy of 1.25 MeV are well-known to generate large amounts of defects in semiconductor electronic devices. Here we investigate the novel effect of gamma radiation on diffusive memristors based on metallic silver nanoparticles dispersed in a dielectric matrix of silica. Our experimental findings show that after exposure to radiation, the memristors and artificial neurons made of them demonstrate much better performance in terms of stable volatile resistive switching and higher spiking frequencies, respectively, compared to the pristine samples. At the same time we observe partial oxidation of silver and reduction of silicon within the switching silica layer. We propose nanoinclusions of reduced silicon distributed across the silica layer to be the backbone for metallic nanoparticles to form conductive filaments, as supported by our theoretical simulations of radiation-induced changes in the diffusion process. Our findings propose a new opportunity to engineer the required characteristics of diffusive memristors in order to emulate biological neurons and develop bio-inspired computational technology. Gamma photons were used to break Si-O bonds in silicon oxide-based volatile memristor devices. The corresponding radiation-induced nanodefects were shown to significantly improve the resistive switching performance.
ISSN:2040-3364
2040-3372
DOI:10.1039/d3nr01853a