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A novel stable zinc-oxo cluster for advanced lithography patterning
Recently, the development of novel metal-containing resists has received much attention in extreme ultraviolet lithography (EUVL) owing to their smaller sizes and higher EUV absorptivity than traditional polymer resists. Herein, we report zinc (Zn)- VBA , a novel stable zinc-oxo cluster-based photor...
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Published in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2023-02, Vol.11 (9), p.481-487 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Recently, the development of novel metal-containing resists has received much attention in extreme ultraviolet lithography (EUVL) owing to their smaller sizes and higher EUV absorptivity than traditional polymer resists. Herein, we report zinc (Zn)-
VBA
, a novel stable zinc-oxo cluster-based photoresist molecule with the [Zn
4
O]
6+
inner core and six organic ligands based on 4-vinylbenzoic acid. Zn-
VBA
was simply prepared by the reactions between the zinc-oxide and 4-vinylbenzoic acid, exhibiting atomically precise structure and good batch stability. Based on single-crystal X-ray diffraction analysis, the size of Zn-
VBA
is 2.2 nm, which is in line with the high-resolution requirements for advanced lithography technology. Zn-
VBA
exhibits excellent thermal stability up to 400 °C, much better than the reported zinc-based clusters. Moreover, theoretical studies have revealed the roles of organic ligands in their high thermal stability. Spin-coating methods were employed to fabricate homogenous thin films of Zn-
VBA
, which showed a quite small roughness value in the absence of viscosifiers, as confirmed by atomic force microscopy images. More importantly, the Zn-
VBA
films performed well in the electron beam lithography (EBL) and EUVL tests without the addition of photoinitiators, giving prominent pattern lines. This work proves the structural advantages of benzoic-acid-based zinc-oxo clusters as promising EUV patterning materials, which inspire future exploration of metal-oxo clusters (MOCs) resist materials for advanced lithography.
Single crystal X-ray diffraction analysis showed a Zn-
VBA
with a size of 2.2 nm, in line with advanced lithography technology requirements. The introduction of benzoic acid ligands resulted in high thermal stability, good solubility, and good film-forming capability. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/d3ta00115f |