Loading…

Temperature-dependent dielectric relaxations and transport properties of Sm 3+ & La 3+ doped Bi-oxide nanoparticles

The suggested novel rare-earth doped bismuth calcium cobaltites Bi Ca Sm La CoO ( = 0.000-0.075) were synthesized by a co-precipitation route. XRD was utilized for structural information. SEM and EDX were used for microstructural and elemental analysis. AC conductivities ( ) were measured at tempera...

Full description

Saved in:
Bibliographic Details
Published in:Physical chemistry chemical physics : PCCP 2024-09, Vol.26 (37), p.24322-24334
Main Authors: Abbas, Yasir, Kiani, Haris Farooq, Kamran, M, Anis-Ur-Rehman, M
Format: Article
Language:English
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The suggested novel rare-earth doped bismuth calcium cobaltites Bi Ca Sm La CoO ( = 0.000-0.075) were synthesized by a co-precipitation route. XRD was utilized for structural information. SEM and EDX were used for microstructural and elemental analysis. AC conductivities ( ) were measured at temperatures of 100-500 °C. The of all synthesized samples increased as the temperature increased, indicating that they are semi-conductive. The conduction process of all the synthesized samples was examined using Jonscher's power law. The spreading factor and relaxation time of all the synthesized samples were studied using nonlinear Debye fitting. At a high temperature of 500 °C, the dielectric curve showed anomalous behaviour that was related to the negative values of the dielectric constant at 500 kHz-3 MHz. The studied (Sm-La)-doped samples showed higher values of the dielectric constant (1.03 × 10 ). The Cole-Cole plot used in the impedance investigation reveals that as the temperature rises, the diameter of the arcs decreases, implying a drop in impedance and rises in conductivity. The growing trend of DC electrical conductivity with temperature depicts the semi-conductive nature of the synthesized materials.
ISSN:1463-9076
1463-9084
DOI:10.1039/d4cp02111h