Advances in Mg 3 Sb 2 thermoelectric materials and devices

• Published in: Nanoscale 2024-12, Vol.17 (1), p.53-64
• Main Authors: Tang, Jing, Theja, Vaskuri C S, Liu, Kejia, Karthikeyan, Vaithinathan, Chen, Yue
• Format: Article
• Language: English
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d4nr03712j

Thermoelectric technology offers a green-viable and carbon-neutral solution for energy problems by directly converting waste heat to electricity. For years, Bi Te -based compounds have been the main choice materials for commercial thermoelectric devices. However, Bi Te comprises scarce and toxic tellurium (Te) elements, which might limit its large-scale application. Recently, Mg Sb compounds have drawn increasing attention as an alternative to Bi Te thermoelectrics due to their excellent thermoelectric performance. Enabled by effective strategies such as optimizing carrier concentration, introducing point defects, and manipulating carrier scattering mechanisms, Mg Sb compounds have realized an improved thermoelectric performance. In this review, optimizing strategies for both Mg Sb -based thermoelectric materials and devices are discussed. Moreover, the flexibility and plasticity of Bi-alloyed Mg Sb mainly stemming from the dense dislocations are outlined. The above strategies summarized here for enhancing Mg Sb thermoelectrics are believed to be applicable to many other thermoelectrics.