SiOx nanostructures grown under atmospheric pressure

Using a vapor liquid solid method with Au as the catalyst and a Si substrate as the Si source, high temperature annealing under atmospheric pressure resulted in a series of SiO x nanoflowers and nanobangles. The growth process and mechanism were investigated by comparing the morphologies of the nano...

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Bibliographic Details
Published in:CrystEngComm 2013-01, Vol.15 (46), p.9963-9967
Main Authors: Zhang, Peikai, Cui, Yimin
Format: Article
Language:English
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Summary:Using a vapor liquid solid method with Au as the catalyst and a Si substrate as the Si source, high temperature annealing under atmospheric pressure resulted in a series of SiO x nanoflowers and nanobangles. The growth process and mechanism were investigated by comparing the morphologies of the nanoflowers grown using different annealing conditions. Triangular etch pits over ten micrometers in size were found scattered on the substrates, around which different SiO x nanoflowers had developed dozens of micrometers away. Photoluminescence measurements of the nanoflowers demonstrated that the luminous intensities increased with the increasing length and amount of the nanoflowers' petals. Different SiO x nanoflowers were grown on Si substrates. Their morphologies varied depending on the annealing time and distance to the etch pits.
ISSN:1466-8033
1466-8033
DOI:10.1039/c3ce41681j