Compact CMOS IR-UWB transmitter using variable-order Gaussian pulse generator

• Published in: Electronics letters 2013-08, Vol.49 (16), p.1038-1040
• Main Authors: Reja, M.M, Hameed, Z, Moez, K, Shamsadini, S
• Format: Article
• Language: English
• Subjects: active networks; amplifiers; Applied sciences; area‐efficient CMOS impulse radio ultra‐wideband transmitter; bias current; cascade connection; Circuit properties; CMOS digital integrated circuits; compact CMOS IR‐UWB transmitter; differentiating circuits; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; fifth–sixth‐order Gaussian pulses; frequency 200 MHz; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; power 10 mW to 12 mW; pulse generators; radio transmitters; Radiocommunications; RC differentiator networks; size 90 nm; spectral mask; Telecommunications; Telecommunications and information theory; transmitted signals; TSMC digital CMOS process; tunable amplifiers; ultra wideband technology; variable‐order Gaussian pulse generator; voltage‐controlled current–source; Wireless communications
• ISSN: 0013-5194; 1350-911X; 1350-911X
• DOI: 10.1049/el.2013.1975

An area-efficient CMOS impulse radio ultra-wideband (IR-UWB) transmitter capable of generating variable orders of Gaussian pulses is presented. The core of the pulse generator is constructed using the cascade connection of RC differentiator networks separated by tunable amplifiers. Tuning the bias current of the amplifier using a voltage-controlled current-source allows for generation of varying orders of Gaussian pulses, which in turn allows for controlling the power and spectral mask of transmitted signals. Fabricated in a TSMC 90 nm digital CMOS process, the measurement shows that the fully integrated transmitter can generate fifth- to sixth-order Gaussian pulses. The core transmitter consumes 10.0–12.0 mW at 200 MHz pulse repeating frequency and occupies a chip area of 0.008 mm2 only.