GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV

A three-terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on silicon (Si) (111) substrate with a buffer thickness of 5.5 µm. The breakdown voltage of the 1.5 × 50 μm2 devices has been improved by more than 200% by applying a local substrat...

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Bibliographic Details
Published in:Electronics letters 2015-09, Vol.51 (19), p.1532-1534
Main Authors: Herbecq, N, Roch-Jeune, I, Linge, A, Grimbert, B, Zegaoui, M, Medjdoub, F
Format: Article
Language:English
Subjects:
AlGaN‐GaN
AlGaN‐GaN HEMT
aluminium compounds
blocking voltage
Breakdown
Drains
electric breakdown
Electric potential
Engineering Sciences
gallium compounds
GaN‐on‐silicon
GaN‐Si
High electron mobility transistors
III‐V semiconductors
lateral power devices
local substrate removal
parasitic substrate conduction
Semiconductor devices
Semiconductor technology
Si substrate
silicon
Silicon substrates
size 5.5 mum
three‐terminal breakdown voltage
Transistors
Voltage
voltage 3 kV
wide band gap semiconductors
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Summary:A three-terminal breakdown voltage over 3 kV is reported on AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on silicon (Si) (111) substrate with a buffer thickness of 5.5 µm. The breakdown voltage of the 1.5 × 50 μm2 devices has been improved by more than 200% by applying a local substrate removal all around the drain of the transistors in order to suppress the parasitic substrate conduction phenomenon. This establishes a new record breakdown voltage for GaN-on-silicon lateral power devices while maintaining a low specific on-resistance of about 10 mΩ · cm2.
ISSN:0013-5194
1350-911X
1350-911X
DOI:10.1049/el.2015.1684