Al 0 .3 Ga 0.7 N PN diode with breakdown voltage >1600 V

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Bibliographic Details
Published in:Electronics letters 2016-07, Vol.52 (15), p.1319-1321
Main Authors: Allerman, A.A., Armstrong, A.M., Fischer, A.J., Dickerson, J.R., Crawford, M.H., King, M.P., Moseley, M.W., Wierer, J.J., Kaplar, R.J.
Format: Article
Language:English
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ISSN:0013-5194
1350-911X
DOI:10.1049/el.2016.1280