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Temperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs

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Bibliographic Details
Published in:IET power electronics 2020-02, Vol.13 (3), p.456-462
Main Authors: Li, Yuan, Zhao, Yuanfu, Huang, Alex Q., Zhang, Liqi, Huang, Qingyun, Yu, Ruiyang, Sen, Soumik, Ma, Qingxuan, He, Yunlong
Format: Article
Language:English
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ISSN:1755-4543
1755-4543
DOI:10.1049/iet-pel.2019.0540