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Temperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs
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Published in: | IET power electronics 2020-02, Vol.13 (3), p.456-462 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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ISSN: | 1755-4543 1755-4543 |
DOI: | 10.1049/iet-pel.2019.0540 |