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Multilevel non‐volatile memory based on Al 2 O 3 /ZnO bilayer device

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Bibliographic Details
Published in:Micro & nano letters 2020-11, Vol.15 (13), p.910-914
Main Authors: Arya Lekshmi, Jagath, Nandha Kumar, Thulasiraman, Jinesh, Kochupurackal
Format: Article
Language:English
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ISSN:1750-0443
1750-0443
DOI:10.1049/mnl.2020.0335