Peculiarities of electron transport and resistive switching in point contacts on TiSe2, TiSeS, and Cu x TiSe2

Compound TiSe2 has received much attention among the transition metal chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, the emergence of charge density wave (CDW) state, induced superconductivity, etc. Here, we report the discovery of a new feature...

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Bibliographic Details
Published in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2023-07, Vol.49 (7), p.834-840
Main Authors: Bashlakov, D. L., Kvitnitskaya, O. E., Aswartham, S., Shemerliuk, Y., Berger, H., Efremov, D. V., Büchner, B., Naidyuk, Yu. G.
Format: Article
Language:English
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Summary:Compound TiSe2 has received much attention among the transition metal chalcogenides because of its thrilling physical properties concerning atypical resistivity behavior, the emergence of charge density wave (CDW) state, induced superconductivity, etc. Here, we report the discovery of a new feature of TiSe2, namely, the observation of resistive switching in voltage biased point contacts (PCs) based on TiSe2 and its derivatives doped by S and Cu (TiSeS, CuxTiSe2). The switching occurs between a low resistive mainly “metallic-type” state and a high resistive “semiconducting-type” state when a bias voltage is applied (usually 
ISSN:1063-777X
1090-6517
DOI:10.1063/10.0019694