Solid phase epitaxy and doping of Si through Sb-enhanced recrystallization of polycrystalline Si

We have investigated a Sb-enhanced solid phase epitaxy of Si on a p-type (100)Si substrate through intermixing of amorphous Si and Sb thin films and a subsequent recrystallization of the polycrystalline Si (poly-Si). By using cross-sectional transmission electron microscopy, we show that a high conc...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-09, Vol.53 (10), p.902-904
Main Authors: GONG, S. F, HENTZELL, H. T. G, RADNOCZI, G, CHARAI, A
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have investigated a Sb-enhanced solid phase epitaxy of Si on a p-type (100)Si substrate through intermixing of amorphous Si and Sb thin films and a subsequent recrystallization of the polycrystalline Si (poly-Si). By using cross-sectional transmission electron microscopy, we show that a high concentration of Sb enhances recrystallization of poly-Si, which eventually results in an epitaxial growth of Si. This is most likely due to an enhanced Si self-mobility caused by a Sb diffusion in the vicinity of the grain boundaries of the poly-Si. At the same time the doped layer was observed to serve as a diffusion source for doping the Si substrate. Secondary ion mass spectrometry measurements reveal the concentrations and the depth profiles of Sb in the Si substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100110