Solid phase epitaxy and doping of Si through Sb-enhanced recrystallization of polycrystalline Si

• Published in: Applied physics letters 1988-09, Vol.53 (10), p.902-904
• Main Authors: GONG, S. F, HENTZELL, H. T. G, RADNOCZI, G, CHARAI, A
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.100110

We have investigated a Sb-enhanced solid phase epitaxy of Si on a p-type (100)Si substrate through intermixing of amorphous Si and Sb thin films and a subsequent recrystallization of the polycrystalline Si (poly-Si). By using cross-sectional transmission electron microscopy, we show that a high concentration of Sb enhances recrystallization of poly-Si, which eventually results in an epitaxial growth of Si. This is most likely due to an enhanced Si self-mobility caused by a Sb diffusion in the vicinity of the grain boundaries of the poly-Si. At the same time the doped layer was observed to serve as a diffusion source for doping the Si substrate. Secondary ion mass spectrometry measurements reveal the concentrations and the depth profiles of Sb in the Si substrate.