Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitatio...

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Bibliographic Details
Published in:Applied physics letters 1988-07, Vol.53 (1), p.34-36
Main Authors: AHN, S. T, KENNEL, H. W, PLUMMER, J. D, TILLER, W. A, REK, Z. U, STOCK, S. R
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Diffusion in solids
Diffusion of impurities
Exact sciences and technology
Physics
Transport properties of condensed matter (nonelectronic)
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Summary:The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100114