Minority-carrier properties of GaAs on silicon

The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the...

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Bibliographic Details
Published in:Applied physics letters 1988-07, Vol.53 (3), p.222-224
Main Authors: AHRENKIEL, R. K, AL-JASSIM, M. M, DUNLAVY, D. J, JONES, K. M, VERNON, S. M, TOBIN, S. P, HAVEN, V. E
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100137