Unified planar process for fabricating heterojunction bipolar transistors and buried-heterostructure lasers utilizing impurity-induced disordering

We describe results on a novel geometry of heterojunction bipolar transistor that has been realized by impurity-induced disordering. This structure is fabricated by a method that is compatible with techniques for the fabrication of low threshold current buried-heterostructure lasers. We have demonst...

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Bibliographic Details
Published in:Applied physics letters 1988-12, Vol.53 (26), p.2669-2671
Main Authors: THORNTON, R. L, MOSBY, W. J, CHUNG, H. F
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:We describe results on a novel geometry of heterojunction bipolar transistor that has been realized by impurity-induced disordering. This structure is fabricated by a method that is compatible with techniques for the fabrication of low threshold current buried-heterostructure lasers. We have demonstrated this compatibility by fabricating a hybrid laser/transistor structure that operates as a laser with a threshold current of 6 mA at room temperature, and as a transistor with a current gain of 5.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100192