Quantitative defect etching of GaAs on Si: is it possible?

The Wright etch [M. W. Jenkins, J. Electrochem. Soc. 124, 757 (1977)], hitherto used to reveal defects in silicon, has been examined as a defect etchant for GaAs epitaxial layers on silicon. Various calibration techniques, including transmission electron microscopy of etched epitaxial layers, have b...

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Bibliographic Details
Published in:Applied physics letters 1988-12, Vol.53 (24), p.2432-2434
Main Author: STIRLAND, D. J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:The Wright etch [M. W. Jenkins, J. Electrochem. Soc. 124, 757 (1977)], hitherto used to reveal defects in silicon, has been examined as a defect etchant for GaAs epitaxial layers on silicon. Various calibration techniques, including transmission electron microscopy of etched epitaxial layers, have been used to establish that etch features correspond with dislocations. Problems involved in direct comparisons of defect densities measured by different methods are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100211