Molecular beam study of laser-induced chemical etching of Si(111) by chlorine molecules

Chemical etching of Si(111) surface by chlorine molecules under 355 and 560 nm irradiation has been studied using a continuous wave supersonic molecular beam. Only two products, SiCl and SiCl2, were observed. The translational energy distributions of the gaseous products have been measured as a func...

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Bibliographic Details
Published in:Applied physics letters 1988-11, Vol.53 (20), p.1955-1957
Main Authors: Li, Yu-Lin, Zhang, Zhuang-Jian, Zheng, Qi-Ke, Jin, Zhong-Kao, Wu, Zhen-Kai, Qin, Qi-Zong
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Chemical etching of Si(111) surface by chlorine molecules under 355 and 560 nm irradiation has been studied using a continuous wave supersonic molecular beam. Only two products, SiCl and SiCl2, were observed. The translational energy distributions of the gaseous products have been measured as a function of laser fluence, and can be fitted with Maxwell–Boltzmann distributions. Study on the effect of translational energy of incident chlorine molecules on the reaction rate is also presented for the first time.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100334