Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy

Variation in the magnitude and sign of the strain in GaAs/InGaAs/GaAs single quantum wells are studied as a function of layer thickness using photoluminescence spectroscopy. It is found that as the compressively strained ternary layer relaxes with increasing thickness, a tensile strain is introduced...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-07, Vol.53 (2), p.113-115
Main Authors: GAL, M, ORDERS, P. J, USHER, B. F, JOYCE, M. J, TANN, J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Variation in the magnitude and sign of the strain in GaAs/InGaAs/GaAs single quantum wells are studied as a function of layer thickness using photoluminescence spectroscopy. It is found that as the compressively strained ternary layer relaxes with increasing thickness, a tensile strain is introduced in the GaAs capping layer. This reduces the GaAs band gap and lifts the degeneracy of the valence band, which becomes light hole in character.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100385