Short-wavelength (≤6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers

Data are presented demonstrating short-wavelength (≲6400 Å) continuous (cw) laser operation of p-n diode In0.5(AlxGa1−x)0.5P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from −30 °C to room temp...

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Bibliographic Details
Published in:Applied physics letters 1988-11, Vol.53 (19), p.1826-1828
Main Authors: DALLESASSE, J. M, NAM, D. W, DEPPE, D. G, HOLONYAK, N. JR, FLETCHER, R. M, KUO, C. P, OSENTOWSKI, T. D, CRAFORD, M. G
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:Data are presented demonstrating short-wavelength (≲6400 Å) continuous (cw) laser operation of p-n diode In0.5(AlxGa1−x)0.5P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from −30 °C to room temperature (RT≊300 K, λ≊6395 Å) the threshold current density changes from 2.3×103 A/cm2 (−30 °C) to 3.7×103 A/cm2 (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×103 W/cm2, Jeq∼2.9×103 A/cm2) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100388