Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

Molecular beam epitaxy has been used to grow thin (0.5 μm

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-09, Vol.53 (13), p.1189-1191
Main Authors: WILLIAMS, G. M, WHITEHOUSE, C. R, MCCONVILLE, C. F, CULLIS, A. G, ASHLEY, T, COURTNEY, S. J, ELLIOTT, C. T
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Molecular beam epitaxy has been used to grow thin (0.5 μm
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100405