Thickness and annealing dependence of the superconducting transition temperature of YBa2Cu3O7-x thin films on oxidized silicon and polycrystalline alumina substrates

Superconducting thin films of YBa2Cu3O7−x in the thickness range of 0.2–0.9 μm were tested in this study. A zirconia buffer layer was used to minimize interdiffusion on oxidized silicon and polycrystalline alumina substrates. The highest zero resistance transition temperatures (85 K for oxidized sil...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1988-12, Vol.53 (25), p.2566-2568
Main Authors: MOGRO-CAMPERO, A, TURNER, L. G, KENDALL, G
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Superconducting thin films of YBa2Cu3O7−x in the thickness range of 0.2–0.9 μm were tested in this study. A zirconia buffer layer was used to minimize interdiffusion on oxidized silicon and polycrystalline alumina substrates. The highest zero resistance transition temperatures (85 K for oxidized silicon and 86 K for polycrystalline alumina) were obtained for the thicker films; these are the highest values reported for thin films of this superconductor on these substrates. The thickness and annealing dependence of the transition temperature suggests that interdiffusion limits the performance of the thinner samples.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100533