Structural properties of ultrathin arsenic-doped layers in silicon

• Published in: Applied physics letters 1989-04, Vol.54 (14), p.1332-1334
• Main Authors: DENHOFF, M. W, JACKMAN, T. E, MCCAFFREY, J. P, JACKMAN, J. A, LENNARD, W. N, MASSOUMI, G
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.100707

We have grown δ-doped layers in Si by low-energy As-ion implantation during molecular beam epitaxy. The layers were investigated using cross-sectional transmission electron microscopy, secondary-ion mass spectrometry, Rutherford backscattering, and electrical measurements. The δ-doped layers were between 3.5 and 5.5 nm thick, and showed perfect epitaxy with 50–80% of the incorporated As on substitutional sites. Layers doped at concentrations from 1×1013 cm−2 to 8×1013 cm−2 had bulk-like mobilities and spanned the metal to insulator transition.