Improvement of the stability of hydrogenated amorphous silicon films and solar cells by light pulse treatment

The effect of exposure to high-intensity Xe light pulses at moderate temperatures on the electrical properties and light-induced degradation of intrinsic a-Si:H films and a-Si two-stacked tandem solar cells is described. Little change is observed in the dark electrical properties of the films and in...

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Published in:Applied physics letters 1989-03, Vol.54 (13), p.1226-1228
Main Authors: NEVIN, W. A, YAMAGISHI, H, TAWADA, Y
Format: Article
Language:English
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Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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description The effect of exposure to high-intensity Xe light pulses at moderate temperatures on the electrical properties and light-induced degradation of intrinsic a-Si:H films and a-Si two-stacked tandem solar cells is described. Little change is observed in the dark electrical properties of the films and in the efficiency of the solar cells, while the photoconductivity of the films is lowered. The light stability of both the films and solar cells is considerably improved, such that the degradation of a light pulse treated solar cell is almost 30% smaller than its dark reference after 23 h under AM1.
doi_str_mv 10.1063/1.100723
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source AIP Digital Archive
subjects Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
title Improvement of the stability of hydrogenated amorphous silicon films and solar cells by light pulse treatment
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