Low-temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment

An ultraclean hot-wall low-pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single-crystal Si and SiO2 using ultraclean SiH4 and H2 gases in the temperature range 600–850 °C under an ultraclean environment. As a result of ultraclean processing, an incubati...

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Bibliographic Details
Published in:Applied physics letters 1989-03, Vol.54 (11), p.1007-1009
Main Authors: MUROTA, J, NAKAMURA, N, KATO, M, MIKOSHIBA, N, OHMI, T
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:An ultraclean hot-wall low-pressure chemical vapor deposition (CVD) system was developed and Si films were deposited on single-crystal Si and SiO2 using ultraclean SiH4 and H2 gases in the temperature range 600–850 °C under an ultraclean environment. As a result of ultraclean processing, an incubation period of Si deposition only on SiO2 was found, and low-temperature Si selective deposition and epitaxy on Si were achieved without addition of HCl under deposition conditions where only nonselective polycrystalline Si growth could be obtained in conventional CVD systems.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100781