Variation of lattice parameter with silicon concentration in n-doped, liquid-encapsulated Czochralski GaAs single crystals

The lattice parameters of several Si-doped and undoped GaAs wafers have been measured, using the Bond x-ray diffraction technique. The relative lattice parameters of wafers from the same boule were found to decrease monotonically from seed to tail by as much as 6×10−5(δa/a), following the same trend...

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Bibliographic Details
Published in:Applied physics letters 1989-01, Vol.54 (3), p.271-273
Main Authors: WATSON, G. P, AST, D, GRANT ELLIOT, A
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Halides, chalcogenides and analogous compounds of group vb
Inorganic compounds
Physics
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
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Summary:The lattice parameters of several Si-doped and undoped GaAs wafers have been measured, using the Bond x-ray diffraction technique. The relative lattice parameters of wafers from the same boule were found to decrease monotonically from seed to tail by as much as 6×10−5(δa/a), following the same trend as the increase in Si content ranging from 1.3 to 9.4×1018 cm−3 (measured by secondary-ion mass spectroscopy). A plot of the change in lattice parameter versus the Si concentration shows a linear trend with a slope which is three times larger than that predicted by Vegard’s law. Possible explanations for this discrepancy are discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100987