Ultrahigh Be doping of Ga0.47In0.53As by low-temperature molecular beam epitaxy

Layers of Ga0.47In0.53As grown on InP by a beam epitaxy method have been doped with Be to p=5×1020 cm−3 by growth at substrate temperatures as low as 365 °C. The maximum doping level is strongly growth temperature dependent. Heterostructure bipolar transistors with base doping p=1×1020 cm−3, current...

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Bibliographic Details
Published in:Applied physics letters 1989-06, Vol.54 (25), p.2586-2588
Main Authors: HAMM, R. A, PANISH, M. B, NOTTENBURG, R. N, CHEN, Y. K, HUMPHREY, D. A
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Doping and impurity implantation in iii-v and ii-vi semiconductors
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:Layers of Ga0.47In0.53As grown on InP by a beam epitaxy method have been doped with Be to p=5×1020 cm−3 by growth at substrate temperatures as low as 365 °C. The maximum doping level is strongly growth temperature dependent. Heterostructure bipolar transistors with base doping p=1×1020 cm−3, current gain β=54, and unity current gain cutoff frequency fT=140 GHz are illustrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101057