Aqueous electrochemical growth of anodic sulfide films on mercury cadmium telluride

We present here the first demonstration that oxide-free anodic sulfide layers can be grown on HgCdTe from aqueous electrolytic solutions. Previous work has shown that anodic sulfide films grown from nonaqueous solutions have great potential as passivating layers for HgCdTe. In this work Auger electr...

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Bibliographic Details
Published in:Applied physics letters 1989-05, Vol.54 (22), p.2238-2240
Main Authors: ZIEGLER, J. P, HEMMINGER, J. C
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Solid surfaces and solid-solid interfaces
Surface and interface dynamics and vibrations
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:We present here the first demonstration that oxide-free anodic sulfide layers can be grown on HgCdTe from aqueous electrolytic solutions. Previous work has shown that anodic sulfide films grown from nonaqueous solutions have great potential as passivating layers for HgCdTe. In this work Auger electron spectroscopy depth profiles are used to show that little or no oxide is left at the HgCdTe/CdS interface even when an aqueous growth electrolyte is utilized. Capacitance-voltage data on metal-insulator-semiconductor structures show that the temperature stability of the aqueous sulfide films may be superior to those grown from nonaqueous electrolytes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101135