Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x-ray photoemission spectroscopy

The unstrained valence-band offset ΔEv for the x=0 and x=1 end points of the InxGa1−xAs/InP (100) heterojunction system has been measured by x-ray photoemission spectroscopy (XPS). Although the GaAs/InP and InAs/InP interfaces are strained because of lattice mismatch, the ΔEv values obtained by the...

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Bibliographic Details
Published in:Applied physics letters 1989-05, Vol.54 (19), p.1878-1880
Main Authors: WALDROP, J. R, GRANT, R. W, KRAUT, E. A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Summary:The unstrained valence-band offset ΔEv for the x=0 and x=1 end points of the InxGa1−xAs/InP (100) heterojunction system has been measured by x-ray photoemission spectroscopy (XPS). Although the GaAs/InP and InAs/InP interfaces are strained because of lattice mismatch, the ΔEv values obtained by the XPS measurement method used are characteristic of an unstrained interface. Values of ΔEv (GaAs/InP)=0.19 eV and ΔEv (InAs/InP)=0.31 eV are observed. A linear interpolation between the x=0 and x=1 values gives ΔEv (In0.53 Ga0.47As/ InP)=0.25 eV for the x=0.53 lattice-matched interface (ΔEc /ΔEv =58/42).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101246