Observation of multiple silicon dangling bond configurations in silicon nitride

We show that silicon dangling bonds with different nearest-neighbor configurations and energy levels can be resolved by electron spin resonance (ESR) in silicon nitride. Using an in situ bias technique on large-area metal-nitride-silicon structures, we demonstrate that the ESR line in Si-rich nitrid...

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Bibliographic Details
Published in:Applied physics letters 1989-03, Vol.54 (11), p.1043-1045
Main Authors: JOUSSE, D, KANICKI, J, STATHIS, J. H
Format: Article
Language:English
Subjects:
Color centers and other defects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron paramagnetic resonance and relaxation
Exact sciences and technology
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Physics
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Summary:We show that silicon dangling bonds with different nearest-neighbor configurations and energy levels can be resolved by electron spin resonance (ESR) in silicon nitride. Using an in situ bias technique on large-area metal-nitride-silicon structures, we demonstrate that the ESR line in Si-rich nitride consists of an inhomogeneous distribution of discrete components at different g values. We show that trapping of holes occurs at a site with a g value of 2.0052 corresponding to a pure Si environment, while electron trapping occurs at a site with a g value of 2.0028, corresponding to a pure N environment.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101558