High-frequency performance of InGaAs metal-semiconductor-metal photodetectors at 1.55 and 1.3 μm wavelengths

The high-speed performance of InGaAs interdigitated metal-semiconductor-metal (M-S-M) photodetectors illuminated with 1.55 and 1.3 μm wavelength radiation is modeled using a two-dimensional transit time calculation. Excellent agreement is found with the experimental pulse response of detectors with...

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Bibliographic Details
Published in:Applied physics letters 1989-08, Vol.55 (8), p.729-731
Main Authors: SOOLE, J. B. D, SCHUMACHER, H, LEBLANC, H. P, BHAT, R, KOZA, M. A
Format: Article
Language:English
Subjects:
Bolometer
infrared, submillimeter wave, microwave and radiowave receivers and detectors
Exact sciences and technology
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
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Summary:The high-speed performance of InGaAs interdigitated metal-semiconductor-metal (M-S-M) photodetectors illuminated with 1.55 and 1.3 μm wavelength radiation is modeled using a two-dimensional transit time calculation. Excellent agreement is found with the experimental pulse response of detectors with interdigital spacings of 2 and 3 μm. We study the dependence of the bandwidth on the device dimensions, and also examine the quantum efficiency. The results should aid the design of InGaAs M-S-M detectors with the optimum combination of bandwidth and efficiency for a given application.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101788