Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time-resolved luminescence

Continuous and pulsed photoluminescence experiments in GaSb/AlSb multiple quantum wells have been performed before and after exposure to hydrogen. An appreciable increase in the emission efficiency has been observed for H ion doses as low as 1013/cm2. Since the results cannot be accounted for in ter...

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Bibliographic Details
Published in:Applied physics letters 1989-08, Vol.55 (8), p.772-774
Main Authors: CAPIZZI, M, COLUZZA, C, FROVA, A, CEBULLA, U, FORCHEL, A
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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Summary:Continuous and pulsed photoluminescence experiments in GaSb/AlSb multiple quantum wells have been performed before and after exposure to hydrogen. An appreciable increase in the emission efficiency has been observed for H ion doses as low as 1013/cm2. Since the results cannot be accounted for in terms of the plain passivation of nonradiative centers, the effect is ascribed mostly to a change in the mechanism of carrier relaxation within the lower end of the bound-state distribution.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.101802