Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After a...

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Bibliographic Details
Published in:Applied physics letters 1989-10, Vol.55 (18), p.1838-1840
Main Authors: LU, W. X, QIAN, Y. H, TIAN, R. H, WANG, Z. L, SCHREUTELKAMP, R. J, LIEFTING, J. R, SARIS, F. W
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102181