Plasmaless cleaning process of silicon surface using chlorine trifluoride

Plasmaless etching using ClF3 gas around room temperature has been investigated for the silicon substrates with the various thicknesses of native oxide. The native oxide can be removed with ClF3 gas. A specular surface is obtained by ultraviolet light irradiation which remarkably accelerates the rem...

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Bibliographic Details
Published in:Applied physics letters 1990-03, Vol.56 (12), p.1119-1121
Main Authors: SAITO, Y, YAMAOKA, O, YOSHIDA, A
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
Ultraviolet, visible, and infrared radiation effects (including laser radiation)
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Summary:Plasmaless etching using ClF3 gas around room temperature has been investigated for the silicon substrates with the various thicknesses of native oxide. The native oxide can be removed with ClF3 gas. A specular surface is obtained by ultraviolet light irradiation which remarkably accelerates the removal of the native oxide without changing the etch rate of silicon. The etched surface is analyzed with Auger electron measurement, indicating the existence of Cl atoms on it.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102586