Density of electronic states in a biased resonant tunneling structure

We calculate the change in the density of states due to a biased resonant tunneling structure. The maximum of the density of states near resonance gets shifted towards the low-energy side compared to the unbiased case, as does the transmission coefficient, although the two need not be identical. For...

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Bibliographic Details
Published in:Applied physics letters 1990-01, Vol.56 (3), p.277-279
Main Authors: PANDEY, L. N, SAHU, D, GEORGE, T. F
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Physics
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Summary:We calculate the change in the density of states due to a biased resonant tunneling structure. The maximum of the density of states near resonance gets shifted towards the low-energy side compared to the unbiased case, as does the transmission coefficient, although the two need not be identical. For the case of asymmetric barrier heights, the left-right symmetry of the density of states is broken when the field is nonvanishing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102807