Chemical beam epitaxial growth of InAs using trimethylindium and arsine

• Published in: Applied physics letters 1990-05, Vol.56 (22), p.2219-2221
• Main Authors: CHIU, T. H, DITZENBERGER, J. A
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.102972

We report the growth study of InAs by chemical beam epitaxy. Growth conditions for high quality epilayer has been determined from in situ reflection high-energy electron diffraction measurement, surface morphology, photoluminescence, and Hall measurement. The growth rate measurement shows that the pyrolysis characteristics of trimethylindium are qualitatively similar to that of triethylgallium which have previously been simulated by a surface chemical kinetics model. The boundary condition between In- and As-stabilized surface in the previously unexplored temperature range of 520–560 °C gives an activation energy of 3.1 eV for the As desorption from the InAs surface.