Nanometer resolution in luminescence microscopy of III-V heterostructures

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

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Bibliographic Details
Published in:Applied physics letters 1990-04, Vol.56 (16), p.1564-1566
Main Authors: ABRAHAM, D. L, VEIDER, A, SCHÖNENBERGER, C, MEIER, H. P, ARENT, D. J, ALVARADO, S. F
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron density of states and band structure of crystalline solids
Electron states
Exact sciences and technology
Physics
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Description
Summary:In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103154