Butt-coupled InGaAs metal-semiconductor-metal waveguide photodetector formed by selective area regrowth

We report the monolithic integration of an InGaAs metal-semiconductor-metal Schottky barrier photodetector with a butt-coupled InP/InGaAsP/InP waveguide, where the latter is formed by selective area regrowth using organometallic chemical vapor deposition. A fast pulse response (60–65 ps full width a...

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Bibliographic Details
Published in:Applied physics letters 1990-04, Vol.56 (16), p.1518-1520
Main Authors: SOOLE, J. B. D, SCHUMACHER, H, LEBLANC, H. P, BHAT, R, KOZA, M. A
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Optical elements, devices, and systems
Optics
Physics
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Summary:We report the monolithic integration of an InGaAs metal-semiconductor-metal Schottky barrier photodetector with a butt-coupled InP/InGaAsP/InP waveguide, where the latter is formed by selective area regrowth using organometallic chemical vapor deposition. A fast pulse response (60–65 ps full width at half maximum, with no discernible tail) and a high quantum efficiency (∼80%) were observed for 1.3 μm guided light with the detector biased at 7 V. A thin InAlAs Schottky barrier enhancement layer limited the dark current to ∼28 nA at this bias.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103161