Auger recombination in bulk and quantum well InGaAs

We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time-resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence-band Auger effect involving the split-off valence band. In...

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Bibliographic Details
Published in:Applied physics letters 1990-03, Vol.56 (10), p.913-915
Main Authors: HAUSSER, S, FUCHS, G, HANGLEITER, A, STREUBEL, K, TSANG, W. T
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time-resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence-band Auger effect involving the split-off valence band. In 11 nm quantum well InGaAs we find C=0.9×10−28 cm6/s, independent of temperature. The Auger coefficient decreases slightly with decreasing well width.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103175