Deep energy levels of substitutional impurity pairs in the wurtzite semiconductor ZnS

Employing the on-site tight-binding Koster–Slater Green’s function method, the deep energy levels of two series of paired substitutional sp3-bonded impurities in the II-VI wurtzite semiconductor ZnS are presented. The chemical trends in the deep levels, as the spectator impurity varies, are predicte...

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Bibliographic Details
Published in:Applied physics letters 1990-08, Vol.57 (9), p.870-871
Main Authors: Wu, Xiaojiang, Huang, Mingzhu, Ren, Shang Yuan
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:Employing the on-site tight-binding Koster–Slater Green’s function method, the deep energy levels of two series of paired substitutional sp3-bonded impurities in the II-VI wurtzite semiconductor ZnS are presented. The chemical trends in the deep levels, as the spectator impurity varies, are predicted.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103391