Self-developing holographic recording in Li-implanted te thin films

Ablative holographic recording was performed on Li-implanted Te thin films using a Nd:YAG laser. Implantation doses ranging from 2.9×1013 to 2.3×1015 ions/cm2 within the thin films were seen to produce an increase of the writing threshold by 20% and a reduction of the diffraction efficiency of the r...

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Bibliographic Details
Published in:Applied physics letters 1990-09, Vol.57 (13), p.1354-1356
Main Authors: BEAUVAIS, J, LESSARD, R. A, GALARNEAU, P, KNYSTAUTAS, E. J
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Holography
Optics
Physics
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Summary:Ablative holographic recording was performed on Li-implanted Te thin films using a Nd:YAG laser. Implantation doses ranging from 2.9×1013 to 2.3×1015 ions/cm2 within the thin films were seen to produce an increase of the writing threshold by 20% and a reduction of the diffraction efficiency of the recorded gratings at the highest doses. For doses as low as 1.2×1014 ions/cm2, a considerable increase in the stability of the recording media has been observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103434