10 μm infrared hot-electron transistors

A new hot-electron transistor for 10 μm infrared radiation detection is presented and discussed. The device utilizes an infrared sensitive GaAs/AlGaAs multiple quantum well structure as emitter, a wide quantum well as base, and a thick quantum barrier placed in front of the collector as an electron...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1990-09, Vol.57 (13), p.1348-1350
Main Authors: CHOI, K. K, DUTTA, M, NEWMAN, P. G, SAUDERS, M.-L, LAFRATE, G. J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new hot-electron transistor for 10 μm infrared radiation detection is presented and discussed. The device utilizes an infrared sensitive GaAs/AlGaAs multiple quantum well structure as emitter, a wide quantum well as base, and a thick quantum barrier placed in front of the collector as an electron energy high pass filter. The energy filter selectively permits the higher energy photocurrent to pass to the collector; the lower energy dark current is rejected by the filter, and is drained through the base. The device detectivity, as noted by the collector photocurrent measurements, is much enhanced in comparison with companion infrared photoconductive devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103480