Columnar epitaxy of PtSi on Si (111)

Columnar grains of PtSi surrounded by high quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and Pt in an 8:1 ratio on Si(111) substrates heated to 610–810 °C. The areal density of columns varies from 120 to 3.8 μm−2, and layers with thicknesses from 100 nm to 1 μm have b...

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Bibliographic Details
Published in:Applied physics letters 1990-08, Vol.57 (7), p.686-688
Main Authors: FATHAUER, R. W, XIAO, Q. F, HASHIMOTO, S, NIEH, C. W
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Columnar grains of PtSi surrounded by high quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and Pt in an 8:1 ratio on Si(111) substrates heated to 610–810 °C. The areal density of columns varies from 120 to 3.8 μm−2, and layers with thicknesses from 100 nm to 1 μm have been demonstrated. This result is similar to that found previously for CoSi2 (a nearly lattice-matched cubic-fluorite crystal) on Si(111), in spite of the orthorhombic structure of PtSi. The PtSi grains are also epitaxial and have one of three variants of the relation defined by PtSi(010)//Si(111), with PtSi[001]//Si〈110〉.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103592