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Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures : in-plane epitaxial relation and channeling analysis
The epitaxial growth of (100) Cu on (100) Si reported recently using evaporation is analyzed to determine the epitaxial relation between Cu and Si, and also the crystalline quality of the Cu films. A 45° rotation between the (100) plane of Cu and that of Si around their (001) axis is shown to be nee...
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Published in: | Applied physics letters 1990-11, Vol.57 (21), p.2239-2240 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The epitaxial growth of (100) Cu on (100) Si reported recently using evaporation is analyzed to determine the epitaxial relation between Cu and Si, and also the crystalline quality of the Cu films. A 45° rotation between the (100) plane of Cu and that of Si around their (001) axis is shown to be needed for the lattice match. Such an epitaxial relation is confirmed by the grazing angle x-ray diffraction, with the [010] of Cu parallel to the [011] of Si. The channeling analysis of a 2-μm-thick Cu film shows a 10% minimum near the surface. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.103902 |