Efficient InGaAsP/InP multiple quantum well waveguide optical phase modulator

We report an InGaAsP/InP multiple quantum well optical phase modulator which has a high phase modulation efficiency and low loss modulation over the entire 1.5–1.56 μm fiber band. For a 4-mm-long device, π phase modulation requires a modulation voltage of only 0.6 V at 1.49 μm and 1.1 V at 1.55 μm w...

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Bibliographic Details
Published in:Applied physics letters 1990-11, Vol.57 (22), p.2285-2287
Main Authors: TSANG, H. K, SOOLE, J. B. D, LEBLANC, H. P, BHAT, R, KOZA, M. A, WHITE, I. W
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We report an InGaAsP/InP multiple quantum well optical phase modulator which has a high phase modulation efficiency and low loss modulation over the entire 1.5–1.56 μm fiber band. For a 4-mm-long device, π phase modulation requires a modulation voltage of only 0.6 V at 1.49 μm and 1.1 V at 1.55 μm wavelength. The absorption modulation for a 0–5 V bias change is negligible at 1.55 μm, rising to 0.7 cm−1 at 1.49 μm. The spectral dependence of the electrorefraction from the quantum-confined Stark effect has also been measured for the first time over a wide continuous wavelength range. Far from the absorption edge the electrorefraction decreases approximately as the square of the energy detuning.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103910